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1/11 december 2002 new datasheet according to pcn dsg20023124 marking: p75nf75 @ stb75nf75 STP75NF75 STP75NF75fp n-channel 75v - 0.0095 w - 80a to-220/to-220fp/d2pak stripfet? ii power mosfet n typical r ds (on) = 0.0095 w n exceptional dv/dt capability n 100% avalanche tested n surface-mounting d 2 pak (to-263) power package in tape & reel (suffix t4) description this mosfet series realized with stmicroelectronics unique stripfet? process has specifically been de- signed to minimize input capacitance and gate charge. it is therefore suitable as primary switch in advanced high- efficiency, high-frequency isolated dc-dc converters for telecom and computer applications. it is also intended for any applications with low gate drive requirements. applications n solenoid and relay drivers n dc motor control n dc-dc converters n automotive environment type v dss r ds(on) i d stb75nf75 STP75NF75 STP75NF75fp 75 v 75 v 75 v <0.011 w <0.011 w <0.011 w 80 a 80 a 80 a(*) to-220 1 2 3 to-220fp 1 3 d 2 pa k to-263 (suffix t4) 1 2 3 internal schematic diagram absolute maximum ratings ( ) pulse width limited by safe operating area. (*) refer to soa for the max allowable current values on fp-type due to rth value (1) i sd 80a, di/dt 300a/s, v dd v (br)dss , t j t jmax (2) starting t j = 25 o c, i d = 40a, v dd = 37.5v symbol parameter value unit stb75nf75 STP75NF75 STP75NF75fp v ds drain-source voltage (v gs = 0) 75 v v dgr drain-gate voltage (r gs = 20 k w ) 75 v v gs gate- source voltage 20 v i d drain current (continuous) at t c = 25c 80 80(*) a i d drain current (continuous) at t c = 100c 70 70(*) a i dm ( ) drain current (pulsed) 320 320(*) a p tot total dissipation at t c = 25c 300 45 w derating factor 2.0 0.3 w/c dv/dt (1) peak diode recovery voltage slope 12 v/ns e as (2) single pulse avalanche energy 700 mj v iso insulation withstand voltage (dc) ------ 2000 v t stg storage temperature -55 to 175 c t j operating junction temperature
stb75nf75 STP75NF75 STP75NF75fp 2/11 thermal data electrical characteristics (t case = 25 c unless otherwise specified) off on (* ) dynamic d 2 pak to-220 to-220fp rthj-case thermal resistance junction-case max 0.5 3.33 c/w rthj-amb t l thermal resistance junction-ambient maximum lead temperature for soldering purpose ( 1.6 mm from case, for 10 sec.) max 62.5 300 c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 75 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 234v r ds(on) static drain-source on resistance v gs = 10 v i d = 40 a 0.0095 0.011 w symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds = 15 v i d = 40 a 20 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 3700 730 240 pf pf pf
3/11 stb75nf75 STP75NF75 STP75NF75fp switching on switching off source drain diode (*) pulsed: pulse duration = 300 s, duty cycle 1.5 %. ( ) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 37.5 v i d = 45 a r g = 4.7 w v gs = 10 v (resistive load, figure 3) 25 25 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 60 v i d = 80 a v gs = 10v 117 27 47 160 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 37.5 v i d = 45 a r g = 4.7 w v gs = 10 v (resistive load, figure 3) 66 30 ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 80 320 a a v sd (*) forward on voltage i sd = 80 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a di/dt = 100a/s v dd = 25 v t j = 150c (see test circuit, figure 5) 132 660 10 ns nc a electrical characteristics (continued) safe operating area for to-220fp safe operating area
stb75nf75 STP75NF75 STP75NF75fp 4/11 thermal impedance thermal impedance for to-220fp output characteristics transfer characteristics transconductance static drain-source on resistance
5/11 stb75nf75 STP75NF75 STP75NF75fp gate charge vs gate-source voltage capacitance variations normalized gate threshold voltage vs temperature normalized on resistance vs temperature source-drain diode forward characteristics normalized breakdown voltage temperature
stb75nf75 STP75NF75 STP75NF75fp 6/11 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times
7/11 stb75nf75 STP75NF75 STP75NF75fp dim. mm. inch. min. typ. max. min. typ. typ. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.028 0.037 b2 1.14 1.7 0.045 0.067 c 0.45 0.6 0.018 0.024 c2 1.21 1.36 0.048 0.054 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.394 0.409 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.591 0.624 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.069 m 2.4 3.2 0.094 0.126 r 0.4 0.016 v2 0 8 0 8 d 2 pak mechanical data
stb75nf75 STP75NF75 STP75NF75fp 8/11 dim. mm. inch. min. typ. max. min. typ. typ. a 4.4 4.6 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.40 2.70 0.094 0.106 h2 10 10.40 0.393 0.409 l2 16.40 0.645 l3 28.90 1.137 l4 13 14 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.260 l9 3.50 3.93 0.137 0.154 dia 3.75 3.85 0.147 0.151 to-220 mechanical data
9/11 stb75nf75 STP75NF75 STP75NF75fp dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 to-220fp mechanical data
stb75nf75 STP75NF75 STP75NF75fp 10/11 dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0075 0.082 r50 1.574 t 0.25 0.35 .0.0098 0.0137 w 23.7 24.3 0.933 0.956 dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data * on sales type tube shipment (no suffix)* tape and reel shipment (suffix t4)* d 2 pak footprint tape mechanical data
11/11 stb75nf75 STP75NF75 STP75NF75fp information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics a 2002 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com

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